Microchip VN10K N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92

RS-stocknr.:: 177-9716P
Fabrikantnummer:: VN10KN3-G
Fabrikant:: Microchip

Microchip VN10K N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92

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RS-stocknr.:: 177-9716P
Fabrikantnummer:: VN10KN3-G
Fabrikant:: Microchip

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Microchip
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	310mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-92
	Series	VN10K
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	800mV
	Maximum Power Dissipation Pd	1W
	Maximum Operating Temperature	150°C
	Height	5.33mm
	Standards/Approvals	No
	Width	4.06mm
	Length	5.08mm
	Automotive Standard	No

	Alles selecteren
	Merk Microchip
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 310mA
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-92
	Series VN10K
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 800mV
	Maximum Power Dissipation Pd 1W
	Maximum Operating Temperature 150°C
	Height 5.33mm
	Standards/Approvals No
	Width 4.06mm
	Length 5.08mm
	Automotive Standard No

Datasheet

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 5ohms at a gate-source voltage of 10V. It has a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has continuous drain current of 310mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this transistor are 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) transistor that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC