onsemi NTMFS6H801N Type N-Channel MOSFET, 157 A, 80 V Enhancement, 5-Pin DFN
- RS-stocknr.:
- 172-8785
- Fabrikantnummer:
- NTMFS6H801NT1G
- Fabrikant:
- onsemi
Subtotaal (1 rol van 1500 eenheden)*
€ 1.089,00
(excl. BTW)
€ 1.317,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- 1.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1500 + | € 0,726 | € 1.089,00 |
*prijsindicatie
- RS-stocknr.:
- 172-8785
- Fabrikantnummer:
- NTMFS6H801NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS6H801N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS6H801N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Commercial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
Motor Control
Load Switch
DC/DC converter
Synchronous Rectifier
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