onsemi SuperFET II Type N-Channel MOSFET, 17 A, 650 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
172-3425
Fabrikantnummer:
FCP190N65S3
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

SuperFET II

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

33nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

144W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

16.3mm

Width

4.7 mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 30 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Internal Gate resistance: 7.0 ohm

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 170 mΩ

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