onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V Enhancement, 8-Pin WDFN NVTFS6H850NTAG
- RS-stocknr.:
- 172-3379
- Fabrikantnummer:
- NVTFS6H850NTAG
- Fabrikant:
- onsemi
Tekort aan voorraad
Vanwege een wereldwijd voorraadtekort, weten we niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 172-3379
- Fabrikantnummer:
- NVTFS6H850NTAG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVTFS6H850N | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.15mm | |
| Standards/Approvals | No | |
| Width | 3.15mm | |
| Height | 750μm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVTFS6H850N | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Operating Temperature 175°C | ||
Length 3.15mm | ||
Standards/Approvals No | ||
Width 3.15mm | ||
Height 750μm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
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