onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252 NVD5C464NT4G
- RS-stocknr.:
- 172-3367
- Fabrikantnummer:
- NVD5C464NT4G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 35,85
(excl. BTW)
€ 43,375
(incl. BTW)
Voeg 75 eenheden toe voor gratis bezorging
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- Verzending vanaf 20 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 1,434 | € 35,85 |
| 100 - 225 | € 1,236 | € 30,90 |
| 250 + | € 1,071 | € 26,78 |
*prijsindicatie
- RS-stocknr.:
- 172-3367
- Fabrikantnummer:
- NVD5C464NT4G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVD5C464N | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.25mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVD5C464N | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.25mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 23 mΩ
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