Toshiba Single 1 N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 SSM3K335R
- RS-stocknr.:
- 171-2542
- Fabrikantnummer:
- SSM3K335R
- Fabrikant:
- Toshiba
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 171-2542
- Fabrikantnummer:
- SSM3K335R
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 0.7mm | |
| Width | 1.8mm | |
| Number of Elements per Chip | 1 | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 0.7mm | ||
Width 1.8mm | ||
Number of Elements per Chip 1 | ||
- Land van herkomst:
- TH
4.5-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 38 mΩ (max) (@VGS = 10 V)
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
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