Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1
- RS-stocknr.:
- 171-1945
- Fabrikantnummer:
- IPD200N15N3GATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 12,84
(excl. BTW)
€ 15,54
(incl. BTW)
Voeg 80 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 150 stuk(s) vanaf 23 februari 2026
- Plus verzending 240 stuk(s) vanaf 02 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 1,284 | € 12,84 |
| 20 - 40 | € 1,027 | € 10,27 |
| 50 - 90 | € 0,964 | € 9,64 |
| 100 - 240 | € 0,917 | € 9,17 |
| 250 + | € 0,894 | € 8,94 |
*prijsindicatie
- RS-stocknr.:
- 171-1945
- Fabrikantnummer:
- IPD200N15N3GATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | IPD200N15N3 G | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Width | 9.45 mm | |
| Height | 4.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series IPD200N15N3 G | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Width 9.45 mm | ||
Height 4.57mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.
Excellent switching performance
Worlds lowest R DS(on)
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