Nexperia BUK9Y19 Type N-Channel MOSFET, 184 A, 55 V Enhancement, 5-Pin LFPAK BUK9Y19-55B,115

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€ 16,975

(excl. BTW)

€ 20,55

(incl. BTW)

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Verpakkingsopties
RS-stocknr.:
170-5335
Fabrikantnummer:
BUK9Y19-55B,115
Fabrikant:
Nexperia
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Merk

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

184A

Maximum Drain Source Voltage Vds

55V

Package Type

LFPAK

Series

BUK9Y19

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

85W

Maximum Gate Source Voltage Vgs

15 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

5mm

Width

4.1 mm

Height

1.05mm

Automotive Standard

AEC-Q101

Land van herkomst:
PH
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.

low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids

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