Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8
- RS-stocknr.:
- 170-2265
- Fabrikantnummer:
- IRF7343TRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 4000 eenheden)*
€ 1.684,00
(excl. BTW)
€ 2.036,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 0,421 | € 1.684,00 |
*prijsindicatie
- RS-stocknr.:
- 170-2265
- Fabrikantnummer:
- IRF7343TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SO-8 | |
| Series | IRF7343PbF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 0.96V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SO-8 | ||
Series IRF7343PbF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 0.96V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
Niet conform
The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.
RoHS Compliant
Low RDS(on)
Dynamic dv/dt rating
Fast switching
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