DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.4 A, 60 V Enhancement, 8-Pin SOIC
- RS-stocknr.:
- 169-7465
- Fabrikantnummer:
- DMN6066SSD-13
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 2500 eenheden)*
€ 892,50
(excl. BTW)
€ 1.080,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,357 | € 892,50 |
*prijsindicatie
- RS-stocknr.:
- 169-7465
- Fabrikantnummer:
- DMN6066SSD-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 97mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.89V | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Power Dissipation Pd | 2.14W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 97mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.89V | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Power Dissipation Pd 2.14W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | ||
Width 4 mm | ||
Height 1.5mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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