Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223

RS-stocknr.:: 168-8747
Fabrikantnummer:: IRLL2705TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223

Bulkkorting beschikbaar

Subtotaal (1 rol van 2500 eenheden)*

€ 855,00

(excl. BTW)

€ 1.035,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 24 maart 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
2500 - 2500	€ 0,342	€ 855,00
5000 +	€ 0,325	€ 812,50

*prijsindicatie

RS-stocknr.:: 168-8747
Fabrikantnummer:: IRLL2705TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SOT-223
	Series	HEXFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	32nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	2.1W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Width	3.7 mm
	Standards/Approvals	No
	Height	1.739mm
	Length	6.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 55V
	Package Type SOT-223
	Series HEXFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 32nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 2.1W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Width 3.7 mm
	Standards/Approvals No
	Height 1.739mm
	Length 6.7mm
	Automotive Standard No

Land van herkomst:: MY

Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF

This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.

Features & Benefits

• Maximum continuous drain current of 5.2A

• Drain-source voltage rating of 55V

• Low Rds(on) of 65mΩ for efficient operation

• Compact SOT-223 package for space-saving designs

Applications

• Ideal for power supply circuits

• Utilised in automotive power management systems

• Commonly employed for switching in high-frequency circuits

• Integrates well in power inverters for renewable energy systems

What is the maximum voltage this component can handle?

The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.

Can it operate at high temperatures?

Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.

How does this component manage heat during operation?

With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.

Is it compatible with standard PCB designs?

This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.

What makes this a suitable choice for automation projects?

Its Rapid switching capability and low on-resistance contribute to significant energy savings, enhancing the efficiency of automated systems.