onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin SOIC
- RS-stocknr.:
- 166-3363
- Fabrikantnummer:
- FDS9945
- Fabrikant:
- onsemi
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- RS-stocknr.:
- 166-3363
- Fabrikantnummer:
- FDS9945
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 175°C | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 175°C | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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