onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 166-2528
Fabrikantnummer:: FQB12P20TM
Fabrikant:: onsemi

onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263

Subtotaal (1 rol van 800 eenheden)*

€ 699,20

(excl. BTW)

€ 846,40

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 30 maart 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
800 +	€ 0,874	€ 699,20

*prijsindicatie

RS-stocknr.:: 166-2528
Fabrikantnummer:: FQB12P20TM
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	11.5A
	Maximum Drain Source Voltage Vds	200V
	Series	QFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	470mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	31nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-5V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	3.13W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.67mm
	Height	4.83mm
	Width	9.65 mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 11.5A
	Maximum Drain Source Voltage Vds 200V
	Series QFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 470mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 31nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -5V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 3.13W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.67mm
	Height 4.83mm
	Width 9.65 mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.