onsemi FDN357N Type N-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23
- RS-stocknr.:
- 166-1718
- Fabrikantnummer:
- FDN357N
- Fabrikant:
- onsemi
Subtotaal (1 rol van 3000 eenheden)*
€ 405,00
(excl. BTW)
€ 489,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,135 | € 405,00 |
*prijsindicatie
- RS-stocknr.:
- 166-1718
- Fabrikantnummer:
- FDN357N
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | FDN357N | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94mm | |
| Width | 1.4 mm | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series FDN357N | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.94mm | ||
Width 1.4 mm | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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