Dual N/P-Channel-Channel MOSFET, 3.5 A, 3.9 A, 30 V, 8-Pin SOIC onsemi SI4532DY
- RS-stocknr.:
- 166-1620
- Fabrikantnummer:
- SI4532DY
- Fabrikant:
- onsemi
Dit product is momenteel niet beschikbaar voor nabestelling.
We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.
Toegevoegd
Prijs Per stuk (op een rol 2500)
€ 0,522
(excl. BTW)
€ 0,632
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 2500 + | € 0,522 | € 1.305,00 |
| *prijsindicatie | ||
- RS-stocknr.:
- 166-1620
- Fabrikantnummer:
- SI4532DY
- Fabrikant:
- onsemi
Wetgeving en conformiteit
Productomschrijving
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 3.5 A, 3.9 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 95 mΩ, 190 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Length | 5mm |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |