Infineon OptiMOS 3 N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-220 IPP320N20N3GXKSA1

RS-stocknr.:: 165-6701
Fabrikantnummer:: IPP320N20N3GXKSA1
Fabrikant:: Infineon

Infineon OptiMOS 3 N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-220 IPP320N20N3GXKSA1

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Subtotaal (1 tube van 50 eenheden)*

€ 81,60

(excl. BTW)

€ 98,75

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 200 stuk(s) vanaf 21 september 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,632	€ 81,60
100 +	€ 1,534	€ 76,70

*prijsindicatie

RS-stocknr.:: 165-6701
Fabrikantnummer:: IPP320N20N3GXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	200V
	Series	OptiMOS 3
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	32mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	136W
	Maximum Operating Temperature	175°C
	Height	15.95mm
	Length	10.36mm
	Standards/Approvals	No
	Width	4.57mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 200V
	Series OptiMOS 3
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 32mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 136W
	Maximum Operating Temperature 175°C
	Height 15.95mm
	Length 10.36mm
	Standards/Approvals No
	Width 4.57mm
	Automotive Standard No

Infineon OptiMOS™ 3 Series MOSFET, 34A Maximum Continuous Drain Current, 136W Maximum Power Dissipation - IPP320N20N3GXKSA1

This MOSFET offers high performance for various electronic applications. With continuous drain current capability of up to 34A and a drain-source voltage rating of 200V, it serves as an efficient power solution. The enhancement mode operation ensures dependable performance in circuits requiring switching and synchronous rectification.

Features & Benefits

• N-channel design for effective power conversion

• Low on-resistance reduces energy loss

• High operational temperature tolerance for extreme conditions

• Compatible with high-frequency switching applications

• Pb-free and RoHS compliant for environmentally friendly use

• Halogen-free materials enhance safety and compliance

Applications

• Used in power supplies for industrial automation

• Suitable for synchronous rectification in DC-DC converters

• Applicable in electric vehicle charging systems

• Ideal for battery management systems in consumer electronics

• Utilised in renewable energy inverters for efficient power transfer

What is the maximum temperature range for operation?

The component operates effectively between -55°C and +175°C, making it suitable for diverse environmental conditions.

Can it manage high drain currents?

Yes, it supports continuous drain currents of up to 34A, suitable for high power applications.

What advantages does the low RDS(on) feature provide?

The low on-resistance significantly lowers energy losses during operation, enhancing efficiency in high-power switching applications.

Is it suitable for automotive applications?

With its high temperature rating and low on-resistance, it is appropriate for automotive applications, providing performance under challenging conditions.

How would I ensure proper heat dissipation during installation?

To achieve effective thermal management, ensure the MOSFET is mounted on a heat sink or a PCB with sufficient copper area to aid in dissipating heat generated during operation.