Infineon Isolated HEXFET 2 N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC IRF7303TRPBF
- RS-stocknr.:
- 165-5931
- Fabrikantnummer:
- IRF7303TRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 4000 eenheden)*
€ 1.064,00
(excl. BTW)
€ 1.288,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 0,266 | € 1.064,00 |
*prijsindicatie
- RS-stocknr.:
- 165-5931
- Fabrikantnummer:
- IRF7303TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 16.7nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 16.7nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF
This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for Compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.
Features & Benefits
• Enhanced efficiency with a low Rds(on) of 80 mΩ
• High power dissipation capability with a maximum of 2W
• Dual-channel integration for increased functionality in designs
• Robust thermal operation up to +150°C for versatile applications
• Optimised for enhancement mode operation to improve energy management
• Compact SOIC package facilitates easy integration into modern PCBs
Applications
• Used in power supply circuits for voltage regulation
• Employed in motor control systems for efficient operation
• Suitable for lighting requiring robust switching
• Integrated into consumer electronics for improved power efficiency
• Ideal for automotive systems that require dependable performance
What is the maximum gate-source voltage for this device?
The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.
How does the Rds(on) Value affect efficiency?
A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.
Can it operate at extreme temperatures?
Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.
What type of circuit boards is this compatible with?
It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.
How should one approach the installation of this component?
Care should be taken to use appropriate soldering techniques to avoid heat damage and ensure a secure fit on the PCB.
Gerelateerde Links
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC IRF7303TRPBF
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC IRF7316TRPBF
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC IRF7380TRPBF
- Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 30 V Enhancement, 8-Pin SOIC