Infineon OptiMOS 2 N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSS806NEH6327XTSA1

RS-stocknr.:: 165-5871
Fabrikantnummer:: BSS806NEH6327XTSA1
Fabrikant:: Infineon

Infineon OptiMOS 2 N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSS806NEH6327XTSA1

Subtotaal (1 rol van 3000 eenheden)*

€ 204,00

(excl. BTW)

€ 246,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 9.000 stuk(s) vanaf 12 oktober 2026

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,068	€ 204,00

*prijsindicatie

RS-stocknr.:: 165-5871
Fabrikantnummer:: BSS806NEH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	OptiMOS 2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	820mV
	Typical Gate Charge Qg @ Vgs	1.7nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Maximum Gate Source Voltage Vgs	-8V, +8V
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Height	1mm
	Standards/Approvals	No
	Width	1.3mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series OptiMOS 2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 820mV
	Typical Gate Charge Qg @ Vgs 1.7nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Maximum Gate Source Voltage Vgs -8V, +8V
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Height 1mm
	Standards/Approvals No
	Width 1.3mm
	Automotive Standard AEC-Q101

Land van herkomst:: CN

Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSS806NEH6327XTSA1

This MOSFET is a small-signal N-channel enhancement device designed for surface-mount applications where compact switching performance is required. It is suitable for use in low-voltage power stages and control circuits across a broad temperature range, offering functionality that supports both consumer and automotive electronics environments.

Features and Benefits:

• Low on-resistance 82mΩ reduces conduction losses and heat
• 20V drain-source rating enables safe low-voltage switching
• 2.3A continuous current supports moderate load currents
• 1.7nC gate charge enables quick gate-drive transitions
• 500mW power dissipation limits thermal stress in tight layouts
• Gate tolerated up to 8V for flexible drive voltages

Applications

• Suitable for battery management and power distribution modules
• Ideal for DC-DC converters in compact assemblies
• Used with microcontroller outputs for low-voltage switching
• Can be used for load switching in automotive electronics
• Used for signal-level power control in embedded systems

What package and mounting style does it use?

It comes in a SOT-23 package designed for surface mounting to save board space and simplify automated placement.

What temperature conditions can it withstand during operation?

It operates across a wide thermal interval from -55°C up to 150°C to accommodate harsh environments and elevated junction temperatures.

How many pins are available and what is the channel type?

There are three pins and the device uses an N-channel conduction path configured in enhancement mode.

What is the typical forward/bulk diode characteristic?

The device exhibits a forward voltage of 0.82V across its intrinsic diode under typical conduction conditions.