STMicroelectronics STI28 Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin I2PAK
- RS-stocknr.:
- 164-6985P
- Fabrikantnummer:
- STI28N60M2
- Fabrikant:
- STMicroelectronics
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€ 35,51
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GRATIS bezorging voor bestellingen vanaf € 90,00
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- Verzending vanaf 05 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 10 - 18 | € 2,935 |
| 20 - 48 | € 2,845 |
| 50 - 98 | € 2,77 |
| 100 + | € 2,705 |
*prijsindicatie
- RS-stocknr.:
- 164-6985P
- Fabrikantnummer:
- STI28N60M2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STI28 | |
| Package Type | I2PAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 170W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.3mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STI28 | ||
Package Type I2PAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 170W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.3mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Extremely low gate charge
Excellent output capacitance (COSS ) profile
100% avalanche tested
Zener-protected
Extremely low Qg for increased efficiency
Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)