onsemi Isolated 2 Type P-Channel Small Signal, 430 mA, 20 V Enhancement, 6-Pin SOT-563
- RS-stocknr.:
- 163-1144
- Fabrikantnummer:
- NTZD3152PT1G
- Fabrikant:
- onsemi
Subtotaal (1 rol van 4000 eenheden)*
€ 304,00
(excl. BTW)
€ 368,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 0,076 | € 304,00 |
*prijsindicatie
- RS-stocknr.:
- 163-1144
- Fabrikantnummer:
- NTZD3152PT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type P | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 430mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 280mW | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Height | 0.6mm | |
| Width | 1.3 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type P | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 430mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 280mW | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Height 0.6mm | ||
Width 1.3 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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