Nexperia BUK9Y7R640E Type N-Channel MOSFET, 79 A, 40 V Enhancement, 5-Pin LFPAK BUK9Y7R6-40E,115
- RS-stocknr.:
- 153-2862
- Fabrikantnummer:
- BUK9Y7R6-40E,115
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 18,075
(excl. BTW)
€ 21,875
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.500 stuk(s) vanaf 02 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,723 | € 18,08 |
| 125 - 225 | € 0,521 | € 13,03 |
| 250 - 600 | € 0,507 | € 12,68 |
| 625 - 1225 | € 0,494 | € 12,35 |
| 1250 + | € 0,482 | € 12,05 |
*prijsindicatie
- RS-stocknr.:
- 153-2862
- Fabrikantnummer:
- BUK9Y7R6-40E,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | BUK9Y7R640E | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 15.28mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Maximum Power Dissipation Pd | 95W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.1 mm | |
| Length | 5mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series BUK9Y7R640E | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 15.28mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Maximum Power Dissipation Pd 95W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 4.1 mm | ||
Length 5mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56, Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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