Nexperia Type P-Channel MOSFET, -5.3 A, -20 V Enhancement, 3-Pin SOT-23 PMV30XPEAR
- RS-stocknr.:
- 153-1886
- Fabrikantnummer:
- PMV30XPEAR
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 10,225
(excl. BTW)
€ 12,375
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 3.000 stuk(s) vanaf 03 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,409 | € 10,23 |
| 250 - 600 | € 0,216 | € 5,40 |
| 625 - 1225 | € 0,187 | € 4,68 |
| 1250 - 2475 | € 0,159 | € 3,98 |
| 2500 + | € 0,156 | € 3,90 |
*prijsindicatie
- RS-stocknr.:
- 153-1886
- Fabrikantnummer:
- PMV30XPEAR
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -5.3A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 5.44W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -5.3A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 5.44W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
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