Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	69mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.9W
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	3mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 69mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.9W
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 3mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

30V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

Nexperia Type N-Channel MOSFET, 3.9 A, 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR

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