Nexperia Type N-Channel MOSFET, 3.1 A, 60 V Enhancement, 3-Pin SOT-23

Bekijk alle MOSFETs
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
RS-stocknr.:
151-3050
Fabrikantnummer:
PMV55ENEAR
Fabrikant:
Nexperia
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

12.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

8.36W

Maximum Operating Temperature

150°C

Height

1mm

Length

3mm

Standards/Approvals

No

Width

1.4 mm

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Gerelateerde Links