IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50Q3
- RS-stocknr.:
- 146-1760
- Fabrikantnummer:
- IXFN80N50Q3
- Fabrikant:
- IXYS
Subtotaal (1 tube van 10 eenheden)*
€ 474,61
(excl. BTW)
€ 574,28
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 10 + | € 47,461 | € 474,61 |
*prijsindicatie
- RS-stocknr.:
- 146-1760
- Fabrikantnummer:
- IXFN80N50Q3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 780W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.6mm | |
| Width | 25.07 mm | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 780W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 9.6mm | ||
Width 25.07 mm | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET, 82 A, 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET, 82 A, 500 V Enhancement, 4-Pin SOT-227 IXFN100N50Q3
- IXYS Type N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227 IXFN64N50P
- IXYS Type N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50P
- IXYS Linear Type N-Channel MOSFET, 46 A, 500 V Enhancement, 4-Pin SOT-227