onsemi QFET Type N-Channel MOSFET, 8.8 A, 250 V Enhancement, 3-Pin TO-220F FQPF9N25C
- RS-stocknr.:
- 145-5379
- Fabrikantnummer:
- FQPF9N25C
- Fabrikant:
- onsemi
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 145-5379
- Fabrikantnummer:
- FQPF9N25C
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | QFET | |
| Package Type | TO-220F | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 430mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -30/30 V | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Length | 10.16mm | |
| Height | 9.19mm | |
| Standards/Approvals | RoHS | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series QFET | ||
Package Type TO-220F | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 430mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -30/30 V | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Length 10.16mm | ||
Height 9.19mm | ||
Standards/Approvals RoHS | ||
- Land van herkomst:
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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