Nexperia Dual NX3008CBKS 2 Type P, Type N-Channel Trench MOSFET, 350 mA, 30 V Enhancement, 6-Pin SC-88
- RS-stocknr.:
- 136-4807
- Fabrikantnummer:
- NX3008CBKS,115
- Fabrikant:
- Nexperia
Subtotaal (1 rol van 3000 eenheden)*
€ 231,00
(excl. BTW)
€ 279,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 54.000 stuk(s) vanaf 20 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,077 | € 231,00 |
*prijsindicatie
- RS-stocknr.:
- 136-4807
- Fabrikantnummer:
- NX3008CBKS,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | Trench MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NX3008CBKS | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4.1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 0.52nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 990mW | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type Trench MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NX3008CBKS | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4.1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 0.52nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 990mW | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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