onsemi NTMFS5H600NL Type N-Channel MOSFET, 250 A, 60 V Enhancement, 5-Pin DFN NTMFS5H600NLT1G
- RS-stocknr.:
- 126-3477
- Fabrikantnummer:
- NTMFS5H600NLT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 16,19
(excl. BTW)
€ 19,59
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,238 | € 16,19 |
| 50 - 95 | € 2,788 | € 13,94 |
| 100 + | € 2,422 | € 12,11 |
*prijsindicatie
- RS-stocknr.:
- 126-3477
- Fabrikantnummer:
- NTMFS5H600NLT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NTMFS5H600NL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Width | 5.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NTMFS5H600NL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Operating Temperature 150°C | ||
Length 6.1mm | ||
Height 1.05mm | ||
Width 5.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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