Toshiba DTMOSIV N-Channel MOSFET, 49.2 A, 650 V, 3-Pin TO-247 TK49N65W5,S1F(S
- RS-stocknr.:
- 125-0577P
- Fabrikantnummer:
- TK49N65W5,S1F(S
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 5 eenheden (geleverd in een buis)*
€ 29,15
(excl. BTW)
€ 35,25
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 5 - 9 | € 5,83 |
| 10 - 24 | € 5,31 |
| 25 - 49 | € 5,22 |
| 50 + | € 5,16 |
*prijsindicatie
- RS-stocknr.:
- 125-0577P
- Fabrikantnummer:
- TK49N65W5,S1F(S
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en conformiteit
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 49.2 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | DTMOSIV | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 57 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 400 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V | |
| Length | 15.94mm | |
| Width | 5.02mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.7V | |
| Height | 20.95mm | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 49.2 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series DTMOSIV | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 57 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 400 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 185 nC @ 10 V | ||
Length 15.94mm | ||
Width 5.02mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.7V | ||
Height 20.95mm | ||