ROHM RUM002N02 Type N-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SOT-723 RUM002N02T2L
- RS-stocknr.:
- 124-6839
- Fabrikantnummer:
- RUM002N02T2L
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 5,90
(excl. BTW)
€ 7,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 5.900 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,059 | € 5,90 |
| 500 - 900 | € 0,038 | € 3,80 |
| 1000 - 2400 | € 0,027 | € 2,70 |
| 2500 - 4900 | € 0,027 | € 2,70 |
| 5000 + | € 0,026 | € 2,60 |
*prijsindicatie
- RS-stocknr.:
- 124-6839
- Fabrikantnummer:
- RUM002N02T2L
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RUM002N02 | |
| Package Type | SOT-723 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.9 mm | |
| Length | 1.3mm | |
| Height | 0.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RUM002N02 | ||
Package Type SOT-723 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.9 mm | ||
Length 1.3mm | ||
Height 0.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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