onsemi UltraFET Type N-Channel MOSFET, 56 A, 100 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 75,40

(excl. BTW)

€ 91,25

(incl. BTW)

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Aantal stuks
Per stuk
Per tube*
50 - 200€ 1,508€ 75,40
250 - 950€ 1,389€ 69,45
1000 - 2450€ 1,353€ 67,65
2500 +€ 1,32€ 66,00

*prijsindicatie

RS-stocknr.:
124-1674
Fabrikantnummer:
HUF75639P3
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

UltraFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

25mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

200W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

110nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Height

9.4mm

Automotive Standard

No

Niet conform

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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