onsemi NTA Type P-Channel MOSFET, 760 mA, 20 V Enhancement, 3-Pin SC-75
- RS-stocknr.:
- 121-6301
- Fabrikantnummer:
- NTA4151PT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 144,00
(excl. BTW)
€ 174,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 54.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 6000 | € 0,048 | € 144,00 |
| 9000 + | € 0,047 | € 141,00 |
*prijsindicatie
- RS-stocknr.:
- 121-6301
- Fabrikantnummer:
- NTA4151PT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 760mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTA | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.65mm | |
| Width | 0.9 mm | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 760mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTA | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.65mm | ||
Width 0.9 mm | ||
Height 0.8mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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