Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 IPD100N04S402ATMA1

Bulkkorting beschikbaar
Bekijk bulkkorting

Subtotaal (1 verpakking van 10 eenheden)*

€ 16,32

(excl. BTW)

€ 19,75

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 06 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks
Per stuk
Per verpakking*
10 - 40€ 1,632€ 16,32
50 - 90€ 1,549€ 15,49
100 - 240€ 1,518€ 15,18
250 - 490€ 1,42€ 14,20
500 +€ 1,32€ 13,20

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
110-7111
Fabrikantnummer:
IPD100N04S402ATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

91nC

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Automotive Standard

AEC-Q101

N.v.t.

Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - IPD100N04S402ATMA1


This MOSFET is a high-current switching transistor designed for demanding electronic systems requiring robust thermal and electrical performance. It operates across an extended temperature range and is intended for surface-mount assembly, offering low on-resistance and efficient conduction for power conversion and switching tasks in automotive and industrial environments.

Features and Benefits:


• 2mΩ Rds provides minimal conduction losses
• 100A continuous drain current supports high-load applications
• 150W power dissipation enables substantial heat handling
• 91nC gate charge allows predictable switching control
• 1.2V forward voltage reduces conduction drop under load
• 20V gate tolerance assists protection against overdrive

Applications


• Suitable for automotive power stages requiring AEC‑Q101 qualification
• Used for DC-DC converters in high-current systems
• Ideal for motor-drive switches in automotive electronics
• Can be used for battery management and power distribution
• Used with surface-mount assemblies on compact power modules

What package type should designers accommodate for board layout?


The device comes in a TO‑252 package and is intended for surface mounting, so land patterns should match that three-pin configuration and thermal pad requirements.

How does it perform across temperature extremes?


It maintains operation from -55°C up to 175°C, making it suitable for environments with wide thermal excursions and elevated ambient temperatures.

What polarity and channel arrangement does it use?


It is an N-channel enhancement‑mode device, requiring a positive gate-to-source voltage for conduction and offering standard N-channel switching behaviour.

Are there limits for drain-to-source and gate voltages to consider?


The maximum drain-to-source voltage is 40V and the gate-to-source maximum is 20V, so designs must ensure these limits are not exceeded during transients.

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.