Vishay MXP120A N channel-Channel MOSFET, 36 A, 1.2 kV Enhancement, 4-Pin TO-247AD MXP120A160SL-GE3
- RS-stocknr.:
- 847-940
- Fabrikantnummer:
- MXP120A160SL-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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€ 8,30
(excl. BTW)
€ 10,04
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Verzending vanaf 03 mei 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 8,30 |
| 10 - 49 | € 5,15 |
| 50 - 99 | € 3,12 |
| 100 + | € 3,05 |
*prijsindicatie
- RS-stocknr.:
- 847-940
- Fabrikantnummer:
- MXP120A160SL-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247AD | |
| Series | MXP120A | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 109W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.7V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Height | 5.21mm | |
| Length | 23.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247AD | ||
Series MXP120A | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 109W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.7V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Height 5.21mm | ||
Length 23.6mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-Channel SiC MOSFET delivers high efficiency and Rapid performance, making it Ideal for demanding applications in power management and energy control systems.
Fast switching speed optimises overall system performance
Short circuit withstand time of 2.5 μs enhances reliability
Rated for a maximum drain-source voltage of 1200 V ensures robust operation
Continuous drain current rating of 18 A supports extensive operational requirements
Minimal on-state resistance measured at 160 mOhm reduces energy loss
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