Infineon CoolSiC N channel-Channel Power MOSFET, 65 A, 1400 V Enhancement, 4-Pin TO-247-4 IMZC140R029M2HXKSA1
- RS-stocknr.:
- 762-926
- Fabrikantnummer:
- IMZC140R029M2HXKSA1
- Fabrikant:
- Infineon
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 10,97
(excl. BTW)
€ 13,27
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 240 stuk(s) vanaf 31 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,97 |
| 10 - 99 | € 6,62 |
| 100 + | € 6,35 |
*prijsindicatie
- RS-stocknr.:
- 762-926
- Fabrikantnummer:
- IMZC140R029M2HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 1400V | |
| Package Type | TO-247-4 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 288W | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Standards/Approvals | RoHS | |
| Length | 23.5mm | |
| Width | 16mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 1400V | ||
Package Type TO-247-4 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 288W | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Standards/Approvals RoHS | ||
Length 23.5mm | ||
Width 16mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon CoolSiC 1400 V SiC MOSFET G2 is a Silicon Carbide MOSFET with .XT interconnection technology. It uses .XT interconnection technology for best-in-class thermal performance and robust body diode for hard commutation.
High-temperature operation
Suitable for hard commutation
Reliable thermal management
Enhanced performance
Increased efficiency
Optimized gate drive
Suitable for power electronics
Gerelateerde Links
- Infineon CoolSiC N channel-Channel Power MOSFET, 74 A, 1400 V Enhancement, 4-Pin TO-247-4 IMZC140R024M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET, 65 A, 400 V Enhancement, 4-Pin TO-247-4 IMZA40R025M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET, 65 A, 400 V Enhancement, 3-Pin TO-247 IMW40R025M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET, 207 A, 1400 V Enhancement, 4-Pin PG-TO247-4 IMYR140R008M2HXLSA1
- Infineon CoolSiC N channel-Channel Power MOSFET, 100 A, 1400 V Enhancement, 4-Pin PG-TO247-4 IMYR140R019M2HXLSA1
- Infineon CoolSiC N channel-Channel Power MOSFET, 46 A, 400 V Enhancement, 4-Pin TO-247-4 IMZA40R036M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET, 40 A, 400 V Enhancement, 4-Pin TO-247-4 IMZA40R045M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET, 99 A, 400 V Enhancement, 4-Pin TO-247-4 IMZA40R015M2HXKSA1