Infineon OptiMOS N channel-Channel Power MOSFET, 127 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQE031N08LM6CGATMA1
- RS-stocknr.:
- 762-896
- Fabrikantnummer:
- IQE031N08LM6CGATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 2,15
(excl. BTW)
€ 2,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 13 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,15 |
| 10 - 24 | € 1,80 |
| 25 - 99 | € 1,12 |
| 100 - 499 | € 1,09 |
| 500 + | € 1,07 |
*prijsindicatie
- RS-stocknr.:
- 762-896
- Fabrikantnummer:
- IQE031N08LM6CGATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 127A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 3.15mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Height | 0.75mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 127A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 3.15mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Height 0.75mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor is optimized for high performance SMPS featuring rated voltage of 80 V. It is halogen‑free according to IEC61249‑2‑21 and is RoHS compliant.
N‑channel
100% avalanche tested
75°C operating temperature
Pb‑free lead plating
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 273 A, 100 V Enhancement, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1