Infineon AIMBG75R N-Channel MOSFET, 64 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R050M2HXTMA1
- RS-stocknr.:
- 762-870
- Fabrikantnummer:
- AIMBG75R050M2HXTMA1
- Fabrikant:
- Infineon
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Bulkkorting beschikbaar
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€ 8,80
(excl. BTW)
€ 10,65
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 12 oktober 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 8,80 |
| 10 - 99 | € 6,01 |
| 100 - 499 | € 5,09 |
| 500 - 999 | € 4,61 |
| 1000 + | € 4,21 |
*prijsindicatie
- RS-stocknr.:
- 762-870
- Fabrikantnummer:
- AIMBG75R050M2HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMBG75R | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 169nC | |
| Maximum Power Dissipation Pd | 234W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMBG75R | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Maximum Gate Source Voltage Vgs 23V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 169nC | ||
Maximum Power Dissipation Pd 234W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
The Infineon High performance SiC MOSFET designed to enhance efficiency in automotive applications by facilitating effective power conversion and management.
Features highly robust 750V technology with 100% avalanche testing
Delivers superior efficiency in hard switching and high switching frequencies
Offers best-in-class thermal dissipation for reliable operation
Includes integrated ESD diode for enhanced robustness
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