STMicroelectronics STWA60N0 N channel-Channel Power MOSFET, 62 A, 600 V N, 3-Pin TO-247 STWA60N035M9
- RS-stocknr.:
- 762-554
- Fabrikantnummer:
- STWA60N035M9
- Fabrikant:
- STMicroelectronics
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| 1 - 9 | € 5,53 |
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*prijsindicatie
- RS-stocknr.:
- 762-554
- Fabrikantnummer:
- STWA60N035M9
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | STWA60N0 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 321W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.1mm | |
| Width | 15.9mm | |
| Length | 21.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series STWA60N0 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 321W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Maximum Operating Temperature 150°C | ||
Height 5.1mm | ||
Width 15.9mm | ||
Length 21.1mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
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