Vishay SI9945CDY Dual N-Channel MOSFET, 7.9 A, 60 V Enhancement, 8-Pin SO-8 SI9945CDY-T1-GE3
- RS-stocknr.:
- 736-345
- Fabrikantnummer:
- SI9945CDY-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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Rol(len) | Per rol |
|---|---|
| 1 - 24 | € 0,61 |
| 25 - 99 | € 0,41 |
| 100 + | € 0,22 |
*prijsindicatie
- RS-stocknr.:
- 736-345
- Fabrikantnummer:
- SI9945CDY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SI9945CDY | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Maximum Power Dissipation Pd | 3.6W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Dual N-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SI9945CDY | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Maximum Power Dissipation Pd 3.6W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay N-Channel MOSFET designed for efficient power management. It is Ideal for various applications including load switches and LCD TV inverter circuits.
TrenchFET technology delivers reduced switching losses
Optimised Qg, Qgd, and Qgs ratios enhance performance
100% tested for Rg and UIS ensures reliability
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