Vishay TrenchFET N channel-Channel MOSFET, 59 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3

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€ 1,49

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€ 1,80

(incl. BTW)

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  • Verzending vanaf 10 mei 2027
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RS-stocknr.:
735-241
Fabrikantnummer:
SISS516DN-T1-UE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.011Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18.3nC

Maximum Power Dissipation Pd

65.7W

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

Land van herkomst:
DE
The Vishay N channel MOSFET is designed for efficient power switching in a wide range of electronic applications. it delivers reliable performance with thorough gate resistance and unclamped inductive switching testing, ensuring robust operation under demanding conditions. the device supports environmentally responsible designs with RoHS compliant and halogen free construction, making it suitable for modern power management systems.

Supports high reliability operation in demanding environments

Suitable for synchronous rectification applications

Ideal for use as a primary side switch in power converters

Meets RoHS compliant and halogen free requirements

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