Vishay SiR N channel-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiR580DP

N

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RS庫存編號:
735-135
製造零件編號:
SiR580DP
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

146A

Maximum Drain Source Voltage Vds

80V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0027Ω

Channel Mode

Enhancement

Forward Voltage Vf

80V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

50.6nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

7mm

Width

6mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel power MOSFET rated for 80V drain-source voltage, Ideal for high-efficiency switching in AI power server and DC/DC converter applications. It delivers ultra-low on-resistance of 2.7mΩ maximum at 10V gate drive to minimize conduction losses under heavy loads.

146A continuous drain current at TC=25°C

76nC maximum total gate charge

-55°C to +150°C operating junction temperature

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