Vishay SQ4946CEY Dual N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_BE3
- RS-stocknr.:
- 735-123
- Fabrikantnummer:
- SQ4946CEY-T1_BE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 1,50
(excl. BTW)
€ 1,82
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Rol(len) | Per rol |
|---|---|
| 1 - 24 | € 1,50 |
| 25 - 99 | € 0,98 |
| 100 - 499 | € 0,52 |
| 500 + | € 0,49 |
*prijsindicatie
- RS-stocknr.:
- 735-123
- Fabrikantnummer:
- SQ4946CEY-T1_BE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ4946CEY | |
| Package Type | SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 2.1mm | |
| Width | 2.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Dual N-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ4946CEY | ||
Package Type SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 2.1mm | ||
Width 2.1mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- DE
The Vishay Automotive MOSFET is designed for dual N-channel applications, delivering reliable high-performance switching in automotive environments. With a maximum drain-source voltage of 60V and a robust construction, it ensures durability and longevity in challenging conditions.
Continuous drain current capability of 7A per leg
Dual configuration optimises space and performance
Operating temperature range from -55°C to +175°C
Gerelateerde Links
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- Vishay TrenchFET Dual N-Channel MOSFET, 23.5 A, 60 V Enhancement, 8-Pin SO-8L SQJ968EP-T1_BE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8
- Vishay SQ4917CEY P-Channel MOSFET, -8 A, 60 V Enhancement, 8-Pin SO-8 SQ4917CEY-T1_BE3
- Vishay SI9634DY 4 Dual N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 SI9634DY-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SO-8
- DiodesZetex Dual ZXMS6008DN8 2 Type N-Channel MOSFET, 0.9 A, 60 V Enhancement, 8-Pin SO-8 ZXMS6008DN8-13
