Vishay SQJQ143EL P-Channel MOSFET, -192 A, 40 V Enhancement, 8-Pin PowerPAK (8x8L) SQJQ143EL-T1_GE3
- RS-stocknr.:
- 735-117
- Fabrikantnummer:
- SQJQ143EL-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 3,59
(excl. BTW)
€ 4,34
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 3,59 |
| 10 - 49 | € 2,23 |
| 50 - 99 | € 1,72 |
| 100 + | € 1,40 |
*prijsindicatie
- RS-stocknr.:
- 735-117
- Fabrikantnummer:
- SQJQ143EL-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -192A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK (8x8L) | |
| Series | SQJQ143EL | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0059Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 241nC | |
| Maximum Power Dissipation Pd | 283W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 8mm | |
| Standards/Approvals | RoHS | |
| Length | 7.9mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -192A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK (8x8L) | ||
Series SQJQ143EL | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0059Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 241nC | ||
Maximum Power Dissipation Pd 283W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 8mm | ||
Standards/Approvals RoHS | ||
Length 7.9mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay Power MOSFET designed for automotive applications, capable of operating under harsh conditions. Its robust construction ensures reliability in demanding scenarios, optimising performance with its Advanced design.
Low on-state resistance ensures reduced power loss
Optimised thermal performance prolongs operational life
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