DiodesZetex DMG2302UKQ N channel-Channel MOSFET, 2.8 A, 20 V Enhancement, 3-Pin SOT-23 DMG2302UKQ-7
- RS-stocknr.:
- 719-561
- Fabrikantnummer:
- DMG2302UKQ-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 258,00
(excl. BTW)
€ 312,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 12000 | € 0,086 | € 258,00 |
| 15000 + | € 0,085 | € 255,00 |
*prijsindicatie
- RS-stocknr.:
- 719-561
- Fabrikantnummer:
- DMG2302UKQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMG2302UKQ | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 2.5 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMG2302UKQ | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 2.5 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The DiodesZetex N Channel enhancement mode MOSFET, specifically engineered to meet the rigorous demands of automotive applications. Designed to deliver superior efficiency, it excels in power management and control functions, making it an Ideal choice for tasks such as DC-DC conversion and motor management. With its robust construction and compliance with AEC-Q101 standards, this device is recognised for its reliability and high performance in critical environments. The product combines low on-resistance with fast switching capabilities, ensuring it operates efficiently under various conditions.
Low on resistance characteristics enhance power efficiency
Fast switching speed optimises performance for high-frequency applications
Qualified to AEC-Q101 standards, ensuring reliability in automotive applications
Qualified for PPAP, supporting Advanced product quality planning
ESD protected gate design improves robustness and safety
Halogen and antimony-free, contributing to environmentally friendly practices
Designed with low input capacitance for improved responsiveness
Compliant with RoHS standards, ensuring adherence to environmental regulations
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