DiodesZetex DMN3023L N channel-Channel MOSFET, 6.2 A, 30 V Enhancement, 3-Pin SOT-23 DMN3023L-7
- RS-stocknr.:
- 718-542
- Fabrikantnummer:
- DMN3023L-7
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 3000 eenheden)*
€ 351,00
(excl. BTW)
€ 426,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,117 | € 351,00 |
*prijsindicatie
- RS-stocknr.:
- 718-542
- Fabrikantnummer:
- DMN3023L-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN3023L | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.4nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 2.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN3023L | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.4nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1mm | ||
Width 2.5 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management applications. Its Advanced structure minimises on-state resistance, making it Ideal for a variety of applications where power efficiency is paramount. With excellent switching capabilities and minimal gate threshold voltage, this MOSFET offers reliable performance in both consumer and industrial electronic devices. The product is compliant with RoHS and features ESD protection, ensuring safety and longevity in various operating conditions.
Low on resistance of 25mΩ at VGS = 10V for reduced power loss
Low gate threshold voltage enhances compatibility with low-voltage control signals
Fast switching speed supports high-frequency applications effectively
ESD protected gate ensures device reliability under dynamic conditions
Totally lead-free and fully RoHS compliant for environmental safety
Halogen and antimony-free, contributing to its classification as a 'Green' device
Qualified to AEC-Q101 standards, ensuring high reliability for automotive applications
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