DiodesZetex BSS123WQ N channel-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123WQ-7-F

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€ 156,00

(excl. BTW)

€ 189,00

(incl. BTW)

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3000 - 12000€ 0,052€ 156,00
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RS-stocknr.:
718-531
Fabrikantnummer:
BSS123WQ-7-F
Fabrikant:
DiodesZetex
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Merk

DiodesZetex

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

170mA

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-23

Series

BSS123WQ

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

200mW

Minimum Operating Temperature

-50°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

1mm

Length

2.2mm

Automotive Standard

AEC-Q101

Land van herkomst:
CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management applications. This component is engineered to exhibit low on-state resistance while ensuring high-speed switching performance. It features a robust 100V drain-source voltage rating and is suitable for a range of automotive applications, thanks to its AEC-Q101 qualification and compliance with industry standards, such as IATF 16949. With a small footprint in the SOT323 package and a lead-free, green design, this MOSFET is an Ideal choice for space-constrained environments requiring reliable functionality and environmental compliance.

Low gate threshold voltage enhances efficiency in circuit designs

Exhibits low input capacitance for Faster switching speeds

Compatible with high drain-source voltage ratings ensuring durability

Designed with minimal input/output leakage under typical operating conditions

AEC-Q101 qualified for suitability in automotive applications

PPAP capable, suitable for industries requiring strict change control

Constructed from lead-free materials fully compliant with RoHS directives

Compact SOT323 package allows easy integration into designs

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