ROHM SH8MD5HT Type P, Type N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin SOP-8 SH8MD5HTB1
- RS-stocknr.:
- 687-485
- Fabrikantnummer:
- SH8MD5HTB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 0,96
(excl. BTW)
€ 1,16
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 48 | € 0,48 | € 0,96 |
| 50 - 198 | € 0,425 | € 0,85 |
| 200 - 998 | € 0,385 | € 0,77 |
| 1000 - 1998 | € 0,31 | € 0,62 |
| 2000 + | € 0,30 | € 0,60 |
*prijsindicatie
- RS-stocknr.:
- 687-485
- Fabrikantnummer:
- SH8MD5HTB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P, Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SOP-8 | |
| Series | SH8MD5HT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 167mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Power Dissipation Pd | 2.0W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.75mm | |
| Width | 5.20 mm | |
| Length | 6.30mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P, Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SOP-8 | ||
Series SH8MD5HT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 167mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Power Dissipation Pd 2.0W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.75mm | ||
Width 5.20 mm | ||
Length 6.30mm | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The ROHM N channel and P channel Power MOSFET designed for efficient power management in electronic applications. This device excels in providing low on-resistance and significant power dissipation capabilities, making it an ideal choice for motor drive applications. With both N channel and P channel configurations, it enables versatile circuit designs in compact SOP8 packages. The MOSFET’s robust construction ensures it meets stringent requirements for reliability and compliance, including RoHS and halogen-free certifications, which are essential for modern electronic components.
Low on resistance enhances efficiency and thermal performance
Compact SOP8 package provides space-saving solutions for PCB designs
Pb free and RoHS compliant, ensuring environmentally responsible manufacturing
Halogen-free construction promotes safety and sustainability
Suitable for both N-channel and P-channel applications, offering design flexibility
Reliable operation with 100% Rg and UIS testing for high-quality assurance
Exceptional avalanche ratings for robust handling of transient conditions.
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