ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1
- RS-stocknr.:
- 687-371
- Fabrikantnummer:
- HT8KF6HTB1
- Fabrikant:
- ROHM
Subtotaal (1 rol van 2 eenheden)*
€ 1,55
(excl. BTW)
€ 1,876
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 + | € 0,775 | € 1,55 |
*prijsindicatie
- RS-stocknr.:
- 687-371
- Fabrikantnummer:
- HT8KF6HTB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSMT-8 | |
| Series | HT8KF6H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 214mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Power Dissipation Pd | 14W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Height | 0.8mm | |
| Length | 3.45mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSMT-8 | ||
Series HT8KF6H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 214mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Power Dissipation Pd 14W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Height 0.8mm | ||
Length 3.45mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.
Low on resistance for improved efficiency
High power capacity in a compact HSMT8 mould package
Complies with RoHS regulations with Pb free plating
Halogen-free design to support eco-friendly initiatives
Versatile application in motor drives and power management systems
High maximum junction temperature rating of 150°C
Impressive maximum power dissipation of 14W
Reliable avalanche characteristics with a maximum energy of 0.24mJ
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