ROHM SCT4036KWA Type N-Channel Single MOSFETs, 40 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4036KWATL

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 rol van 2 eenheden)*

€ 23,88

(excl. BTW)

€ 28,90

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 09 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
2 - 8€ 11,94€ 23,88
10 +€ 11,585€ 23,17

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
687-344
Fabrikantnummer:
SCT4036KWATL
Fabrikant:
ROHM
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

ROHM

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263-7LA

Series

SCT4036KWA

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

91nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

21 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

10.2 mm

Length

15.4mm

Height

4.5mm

Automotive Standard

No

Land van herkomst:
TH
The ROHM N channel SiC power MOSFET, engineered for high-performance applications requiring efficient switching capabilities. With a maximum drain-source voltage of 1200V and a typical on-resistance of 36mΩ, this device excels in demanding environments like solar inverters and DC/DC converters. Its robust design features a high continuous drain current rating of 40A at 25°C, supporting versatility in various applications. The device is optimised for fast switching, providing enhanced efficiency. Additionally, its Pb-free lead plating complies with RoHS standards, ensuring an eco-friendly approach without compromising on performance.

Delivers low on resistance for minimal power loss during operation

Supports a wide range of continuous and pulsed drain currents for enhanced flexibility in design

Optimised for fast switching speeds, contributing to improved overall efficiency

Features robust thermal resistance capabilities, allowing for reliable operation at elevated temperatures

Incorporates a simple gate drive design, facilitating easier integration into existing systems

Compliant with environmental regulations through Pb free lead plating, aligning with contemporary sustainability practices

Offers a wide creepage distance of 4.7mm, enhancing reliability in high-voltage applications

Gerelateerde Links