ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI RY7P250BMTBC
- RS-stocknr.:
- 687-343
- Fabrikantnummer:
- RY7P250BMTBC
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 11,40
(excl. BTW)
€ 13,80
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 5,70 | € 11,40 |
| 20 - 98 | € 5,015 | € 10,03 |
| 100 - 198 | € 4,505 | € 9,01 |
| 200 + | € 3,54 | € 7,08 |
*prijsindicatie
- RS-stocknr.:
- 687-343
- Fabrikantnummer:
- RY7P250BMTBC
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RY7P250BM | |
| Package Type | DFN8080T8LSHAAI | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.86mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 1.7mm | |
| Width | 1.70 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RY7P250BM | ||
Package Type DFN8080T8LSHAAI | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.86mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 1.7mm | ||
Width 1.70 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.
Low on resistance for enhanced efficiency
Wide-SOA characteristics for superior reliability
Designed to handle continuous drain currents up to 250A
High pulsed drain current capability at ±900A
Excellent thermal management with thermal resistance of 0.44°C/W
Suitable for a wide operating temperature range of -55 to +175°C
Complies with RoHS and halogen-free standards.
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